IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...
A transistor fabricated from the crystalline phase of an organic semiconductor material could provide a path to improved switching speeds — rivalling those of devices built from inorganic materials ...
Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback