Oxide thin films and their interfaces represent a rapidly evolving field that merges fundamental research with advanced technological applications. The electrical properties of these films – including ...

Tungsten oxide – when applied as a thin film nanostructure – is an important advanced material used by optics and electronics industries. Research published in February 2021 laid out a deposition ...

Used as a versatile material in industry and health care, magnesium oxide may also be a good candidate for quantum technologies. Research led by the U.S. Department of Energy's (DOE) Argonne National ...

Insights into atomic-scale defects may enable next-generation thin-film transistors for smartphones, televisions, and flexible electronics. (Nanowerk News) Many displays found in smartphones and ...

Defects in transistors, such as unwanted impurities and broken chemical bonds in the various layers of the semiconductor, can limit their performance and reliability. These defects are becoming harder ...

Researchers led by UChicago Pritzker School of Molecular Engineering Professor Giulia Gall, together with collaborators in Sweden, used theoretical and computational approaches to discover how defects ...

Researchers have demonstrated a technique for printing thin metal oxide films at room temperature, and have used the technique to create transparent, flexible circuits that are both robust and able to ...

As the world urgently seeks clean energy solutions, solar power stands out for its abundance and scalability compared to ...

A study, conducted by the U.S. Department of Energy’s (DOE) Argonne National Laboratory and published in npj Computational Materials, reveals a mineral defect that might be valuable for quantum ...

The efficieny result represents one of the best performances ever achieved for this kind of thin-film solar cell to date. The device was fabricated with a rear contact interface that reportedly ...

Using hard X-ray photoemission spectroscopy, researchers revealed how oxygen vacancies and structural disorder influence subgap state formation. The figure shows the InGaZnO 4 crystal structure, the ...