The LM5113 is a half-bridge gate driver designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The ...
The DGD2136 introduced by Diodes Incorporated is a fully integrated 3-phase gate driver IC intended for driving N-channel MOSFETs or IGBTs in a half-bridge configuration. With its floating high-side ...
GENEVA, SWITZERLAND, October 9, 2025 /EINPresswire.com/ -- STMicroelectronics’ STDRIVEG210 and STDRIVEG211 half-bridge gallium nitride (GaN) gate drivers are ...
The integrated GaN half-bridge gate drivers bring flexibility and smart protection to a wide range of applications running on industrial or telecom bus voltages up to 220 V. The STDRIVEG210 excels in ...
Members can download this article in PDF format. High efficiency and high power density are critical characteristics when designing power supplies for today’s products. To achieve these goals, ...
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